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TO -22 0A B
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 -- 4 January 2011 Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC converters Switched-mode power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge VGS = 10 V; ID = 17 A; Tj = 25 C VGS = 10 V; ID = 39 A; VDS = 160 V; Tj = 25 C Conditions Tj 25 C; Tj 175 C Tmb = 25 C Min Typ 41 Max Unit 200 39 250 57 V A W m
Static characteristics
Dynamic characteristics QGD 37 50 nC
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name PSMN057-200P TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
PSMN057-200P
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C pulsed; Tmb = 25 C Tmb = 100 C Tmb = 25 C pulsed; Tmb = 25 C Tmb = 25 C Conditions Tj 25 C; Tj 175 C Tj 25 C; Tj 175 C; RGS = 20 k Min -20 -55 -55 Max 200 200 20 27.5 39 156 250 175 175 39 156 300 Unit V V V A A A W C C A A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness non-repetitive drain-source avalanche VGS = 10 V; Tj(init) = 25 C; ID = 35 A; energy Vsup 50 V; unclamped; tp = 100 s; RGS = 50 non-repetitive avalanche current Vsup 50 V; VGS = 10 V; Tj(init) = 25 C; RGS = 50 ; unclamped
IAS
-
35
A
100 Pder (%) 80
003aae614
100 ID (%) 80
003aae615
60
60
40
40
20
20
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
Fig 1.
Normalized total power dissipation as a function of mounting base temperature
Fig 2.
Normalized continuous drain current as a function of mounting base temperature
PSMN057-200P
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
103 IDM (A) 102 RDS(on) = VDS / ID
003aae616
102
003aae628
lAS (A) tp = 10 s 10 100 s 25 C
10 DC 1 ms 10 ms 1 1 10 100 ms 102 VDS (V) 103 1 10-3
Tj prior to avalanche = 150 C
10-2
10-1
1 tAV (ms)
10
Tmb = 25 C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Fig 4.
unclamped inductive load Single-shot avalanche rating; avalanche current as a function of avalanche period
PSMN057-200P
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient in free air Conditions Min Typ 60 Max 0.6 Unit K/W K/W
1 Zth(j-mb) (K/W) 10-1
= 0.5
003aae617
0.2 0.1 0.05 0.02
P = tp T
10-2 single pulse 10-3 10-6 10-5 10-4 10-3
tp T
t
10-2
10-1 1 tp (s)
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN057-200P
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 175 C ID = 1 mA; VDS = VGS; Tj = 25 C IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 200 V; VGS = 0 V; Tj = 25 C VDS = 200 V; VGS = 0 V; Tj = 175 C VGS = 10 V; VDS = 0 V; Tj = 25 C VGS = -10 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 17 A; Tj = 175 C VGS = 10 V; ID = 17 A; Tj = 25 C ID = 39 A; VDS = 160 V; VGS = 10 V; Tj = 25 C Min 178 200 1 2 VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 C VDS = 100 V; RL = 2.7 ; VGS = 10 V; RG(ext) = 5.6 ; Tj = 25 C measured from drain lead to centre of die ; Tj = 25 C measured from tab to centre of die ; Tj = 25 C LS internal source inductance measured from source lead to source bond pad ; Tj = 25 C IS = 25 A; VGS = 0 V; Tj = 25 C IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V; Tj = 25 C Typ 3 0.03 2 2 41 96 13 37 3750 385 180 18 58 105 78 4.5 3.5 7.5 Max 6 4 10 500 100 100 165 57 50 Unit V V V V V A A nA nA m m nC nC nC pF pF pF ns ns ns ns nH nH nH
Static characteristics
Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance
Source-drain diode VSD trr Qr source-drain voltage reverse recovery time recovered charge 0.85 133 895 1.2 V ns nC
PSMN057-200P
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
50 ID (A) 40
003aae618
0.14 4.2 4.4 RDS(on) () 4.6
003aae619
VGS (V) = 10 8 6 5.2
0.10 4.8 5 0.06 5.2 6
30
5 4.8 4.6
20
10
4.4 4.2 0.02 0 0.4 0.8 1.2 1.6 2 VDS (V) 0 10 20 30
VGS (V) = 10 40 ID (A) 50
0
Tj = 25 C Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values
40 ID (A) 30
003aae620
Tj = 25 C Fig 7. Drain-source on-state resistance as a function of drain current; typical values
003aae621
50 gfs (S) 40
Tj = 25 C
30 20 20 10 Tj = 175 C 0 0 2 4 VGS (V) 6 Tj = 25 C 0 0 10 20
Tj = 175 C
10
30 ID (A)
40
VDS > ID x RDSon Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values
2.9 a
003aae622
VDS > ID x RDSon Fig 9. Forward transconductance as a function of drain current; typical values
003aae623
5 VGS(th) (V) 4
maximum
2.1 3 typical minimum
2 1.3 1
0.5 -60
20
100 Tj (C)
180
0 -60
20
100 Tj (C)
180
ID = 1 mA; VDS = VGS
Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature
PSMN057-200P
Fig 11. Gate-source threshold voltage as a function of junction temperature
(c) NXP B.V. 2011. All rights reserved.
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 02 -- 4 January 2011
7 of 13
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
10-1 lD (A) 10-2 10-3 10-4 10-5 10-6 0 1 2 3 4 minimum typical
003aae624
104 C (pF)
003aae625
Ciss
maximum
103
Coss Crss 5 VGS (V) 102 10-1 1 10 VDS (V) 102
Tj = 25 C; VDS = VGS Fig 12. Sub-threshold drain current as a function of gate-source voltage
VGS = 0 V; f = 1 MHz Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
40 IF (A) 30
003aae627
16 VGS (V) 12 VDD = 40 V 8
003aae626
VDD = 160 V 20 Tj = 175 C Tj = 25 C
4
10
0 0 40 80 120 QG (nC) 160
0 0 0.4 0.8 VSDS (V) 1.2
Tj = 25 C; ID = 39 A Fig 14. Gate-source voltage as a function of gate charge; typical values
VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN057-200P
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 16. Package outline SOT78 (TO-220AB)
PSMN057-200P
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
9 of 13
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7. Revision history Release date 20110104 Data sheet status Product data sheet Change notice Supersedes PSMN057-200P v.1 Document ID PSMN057-200P v.2 Modifications:
* *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product specification -
PSMN057-200P v.1
20000601
PSMN057-200P
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
10 of 13
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
PSMN057-200P
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
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PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN057-200P
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 -- 4 January 2011
12 of 13
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 January 2011 Document identifier: PSMN057-200P

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